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| SUM110N03-03 New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 FEATURES rDS(on) (W) ID (A)a 110a 0.0025 @ VGS = 10 V D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage APPLICATIONS D Automotive 12-V Boardnet TO-263 G DRAIN connected to TAB G DS S Ordering Information: SUM110N03-03 N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C d TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 110a 110a 350 70 245 242c 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Mount)d Symbol RthJA RthJC Limit 40 0.62 Unit _C/W Document Number: 72260 S-31257--Rev. A, 16-Jun-03 www.vishay.com 1 SUM110N03-03 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 24 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 15 120 0.002 0.0025 0.0037 0.0044 S W 30 V 2.5 4.5 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.18 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, VGS = 10 V, ID = 110 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 12500 1650 970 170 57 30 20 125 70 25 35 190 105 40 ns 250 nC pF Turn-On Delay Timeb Rise Timeb Turn-Off Delay Timeb Fall Timeb Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM Qrr IF = 50 A, di/dt = 100 A/ms m IF = 50 A, VGS = 0 V 0.9 70 3 0.1 110 350 1.5 140 4.5 0.31 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72260 S-31257--Rev. A, 16-Jun-03 SUM110N03-03 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 250 Vishay Siliconix Transfer Characteristics 150 5V 100 150 100 TC = 125_C 50 25_C 50 3V 0 0 1 2 3 4 5 4V - 55_C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 280 240 TC = - 55_C g fs - Transconductance (S) 200 125_C 160 120 80 40 0 0 20 40 60 80 100 120 0.000 0 0.004 On-Resistance vs. Drain Current r DS(on) - On-Resistance ( W ) 25_C 0.003 0.002 VGS = 10 V 0.001 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 16000 Ciss C - Capacitance (pF) 12000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VDS = 15 V ID = 110 A 12 8000 8 4000 Coss Crss 0 0 5 10 15 20 25 30 4 0 0 70 140 210 280 350 VDS - Drain-to-Source Voltage (V) Document Number: 72260 S-31257--Rev. A, 16-Jun-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N03-03 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 1.8 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) I S - Source Current (A) 1.5 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C 1.2 0.9 0.6 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 1000 Avalanche Current vs. Time 40 Drain Source Breakdown vs. Junction Temperature 38 100 V (BR)DSS (V) I Dav (a) 36 ID = 1 mA IAV (A) @ TA = 25_C 10 34 1 IAV (A) @ TA = 150_C 32 0.1 0.00001 0.0001 0.001 0.01 0.1 1 30 - 50 - 25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72260 S-31257--Rev. A, 16-Jun-03 SUM110N03-03 New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 120 1000 10 ms 100 ms Vishay Siliconix Safe Operating Area 100 I D - Drain Current (A) I D - Drain Current (A) Limited by rDS(on) 100 80 1 ms 10 10 ms 100 ms, dc 60 40 1 20 TA = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Document Number: 72260 S-31257--Rev. A, 16-Jun-03 www.vishay.com 5 |
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